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Brand Name : Infineon
Model Number : IRF1404PBF
Certification : CE, GCF, ROHS
Place of Origin : China
MOQ : 1
Price : Negotiable
Payment Terms : T/T, Western Union,
Supply Ability : 1000pcs per month
Delivery Time : 3-5 working days after received the payment
Packaging Details : Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Function : Step-Up, Step-Down
Output Configuration : Positive or Negative
Topology : Buck, Boost
Output Type : Adjustable
Number of Outputs : 1
IRF1404PBF 40V 162A N-Channel MOSFET with Ultra-Low 1.7mΩ RDS(on) TO-220 Package 100% Avalanche Tested Fast Switching High Power Density & Industrial-Grade Reliability
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Applications
High-Current Power switching
High-power DC-DC converters
Power management modules
Industrial-grade switching power supplies
Motor Drive Systems
  Power tool motor contro
  Automotive starter motor drives
  Industrial servo drivers
  Energy Conversion Systems
Solar inverter power stages
  Uninterruptible power supplies (UPs)
Battery management systems (BMS)
Transportation Applications
  Electric vehicle powertrains
  Forklift electric drives0
  Rail transit auxiliary power
Special Industrial Applications
  Welding equipment power supplies
High-current pulse generators
  Electromagnetic drive devices
INFORMATION
| Category |  | |
| Mfr |  | |
| Series |  | |
| Packaging | Tube |  | 
| Part Status | Not For New Designs |  | 
| FET Type |  | |
| Technology |  | |
| Drain to Source Voltage (Vdss) | 40 V |  | 
| Current - Continuous Drain (Id) @ 25°C |  | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |  | 
| Rds On (Max) @ Id, Vgs | 4mOhm @ 121A, 10V |  | 
| Vgs(th) (Max) @ Id | 4V @ 250µA |  | 
| Gate Charge (Qg) (Max) @ Vgs | 196 nC @ 10 V |  | 
| Vgs (Max) | ±20V |  | 
| Input Capacitance (Ciss) (Max) @ Vds | 5669 pF @ 25 V |  | 
| FET Feature | - |  | 
| Power Dissipation (Max) | 333W (Tc) |  | 
| Operating Temperature | -55°C ~ 175°C (TJ) |  | 
| Grade | - |  | 
| Qualification | - |  | 
| Mounting Type | Through Hole |  | 
| Supplier Device Package | TO-220AB |  | 
| Package / Case |  | |
| Base Product Number | 
Drawing

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| IRF1404PBF 40V 162A N-Channel MOSFET with Ultra-Low 1.7mΩ RDS(on) TO-220 Package 100% Avalanche Tested Fast Switching High Power Density & Industrial Images | 
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